bcv27 c b e n discrete power & signal technologies npn darlington transistor this device is designed for applications requiring extremely high current gain at collector currents to 1.0 a. sourced from process 05. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations thermal characteristics ta = 25c unless otherwise noted bcv27 symbol parameter value units v ceo collector-emitter voltage 30 v v cbo collector-bas e voltage 40 v v ebo emitter-base voltage 10 v i c collector current - continuous 1.2 a t j , t stg operating and storage j unction temperature range -55 to +150 c symbol characteristic max units *bcv27 p d total device dissipation derate above 25 c 350 2.8 mw mw/ c r q ja thermal resistanc e, j unction to ambient 357 c/w sot-23 mark: ff * device mounted on fr-4 pcb 40 mm x 40 mm x 1.5 mm.
bcv27 electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min typ max units v (br)ceo collector-emitter breakdown voltage i c = 10 ma, i b = 0 30 v v (br)cbo collector-bas e breakdown voltage i c = 10 m a, i e = 0 40 v v (br) ebo emitter-base breakdown voltage i e = 100 na, i c = 0 10 v i cbo collector-cutoff current v cb = 30 v, i e = 0 0.1 m a i ebo emitter-cutoff current v eb = 10 v, i c = 0 0.1 m a on characteristics h fe dc current gain i c = 1.0 ma, v ce = 5.0 v i c = 10 ma, v ce = 5.0 v i c = 100 ma, v ce = 5.0 v 4,000 10,000 20,000 v ce( sat ) collector-emitter saturation voltage i c = 100 ma, i b = 0.1 ma 1.0 v v be( sat ) base-emitter saturation voltage i c = 100 ma, i b = 0.1 ma 1.5 v small signal characteristics f t current gain - bandwidth product i c = 30 ma, v ce = 5.0 v, f = 100 mhz 220 mhz c c collector capacitance v cb = 30 v, i e = 0, f = 1.0 mhz 3.5 pf npn darlington transistor (continued) typical characteristics typical pulsed current gain vs collector current 0.001 0.01 0.1 1 0 50 100 150 200 250 i - collector current (a) h - typical pulsed current gain (k) c fe 25 c 125 c - 40 c v = 5v ce collector-emitter saturation voltage vs collector current p0 1 10 100 1000 0 0.4 0.8 1.2 1.6 i - collector current (ma) v - collector emitter voltage (v) c cesat 25c - 40 oc 125 oc b b = 1000
bcv27 npn darlington transistor (continued) typical characteristics (continued) base-emitter saturation voltage vs collector current p05 1 10 100 1000 0 0.4 0.8 1.2 1.6 2 i - collector current (ma) v - base emitter voltage (v) c besat 25 c - 40 oc 125 oc b b = 1000 base emitter on voltage vs collector current p0 1 10 100 1000 0 0.4 0.8 1.2 1.6 2 i - collector current (ma) v - base emitter on voltage (v) c beon v = 5v ce - 40 oc 25 c 125 oc collector-emitter breakdown voltage with resistance between emitter-base 0.1 1 10 100 1000 59.5 60 60.5 61 61.5 62 62.5 resistance (k ) bv - breakdown voltage (v) w w cer collector-cutoff current vs ambient temperature p0 25 50 75 100 125 0.01 0.1 1 10 100 t - ambient temperature ( c) i - collector current (na) a cbo o v = 30v cb input and output capacitance vs reverse voltage p0 0.1 1 10 10 0 2 5 10 20 v - collector voltage(v) capacitance ( pf) ce cib cob f = 1.0 mhz gain bandwidth product vs collector current p05 1 10 20 50 100 150 0 10 20 30 40 50 i - collector current (ma) f - gain bandwidth product (mhz) c t v = 5v ce
bcv27 npn darlington transistor (continued) typical characteristics (continued) power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 temperature ( c) p - power dissipation (mw) d o sot-23
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